Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• the contact electrode [49]. A jump-in voltage lower than 1 V and on/off current ratio higher than 105 were demonstrated for this 2T NEM switch, employing an innovative “pipe-clip” architecture. However, the device showed poor reliability with marked deterioration in performance after 10–20 switching

• of electrical contacts. CNT-based NEM switches exhibit a high on/off current ratio (104–105) [59] and switching speed (≈1 ns) [37] in combination with a jump-in voltage that can be as low as a few volts [35][37]. Yet, most of these devices were unique laboratory scale demonstrations. To the best of

• the on/off current ratio by an order of magnitude [9], but coating of a Si-based NEM switch with amorphous carbon (aC) (Figure 11b) [61] allowed more than 108 switching cycles to be achieved. An alternative method of lowering the on-state voltage range is removing the native oxide layer from the

Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

• Filippo Giannazzo,
• Gabriele Fisichella,
• Aurora Piazza,
• Salvatore Di Franco,
• Giuseppe Greco,
• Simonpietro Agnello and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

• . These properties make MoS2 an interesting material for the next generation of electronics and optoelectronics devices [2]. As an example, field effect transistors with very interesting performance in terms of the on/off current ratio (106–108) and low subthreshold swing (≈70 meV/decade) have been

High I_on/I_off current ratio graphene field effect transistor: the role of line defect

• Mohammad Hadi Tajarrod and
• Hassan Rasooli Saghai

Beilstein J. Nanotechnol. 2015, 6, 2062–2068, doi:10.3762/bjnano.6.210

• ). Because of the reduction of the tunneling current, the off-current in ELD-GNRFET transistors decreases by factor of ca. 2.5 compared to GNRFET transistors. Overall, the on/off current ratio increased in various widths with the line defect attendance. The overall increase in terms of transconductance and

Charge carrier mobility and electronic properties of Al(Op)₃: impact of excimer formation

• Andrea Magri,
• Pascal Friederich,
• Bernhard Schäfer,
• Valeria Fattori,
• Xiangnan Sun,
• Timo Strunk,
• Velimir Meded,
• Luis E. Hueso,
• Wolfgang Wenzel and
• Mario Ruben

Beilstein J. Nanotechnol. 2015, 6, 1107–1115, doi:10.3762/bjnano.6.112

• relative to the TFT device with a channel length of 100 μm is shown. The curve clearly outlines a p-type transistor behavior of the device [33][34][35], and the on/off current ratio calculated from this curve is greater than 104. As a result of the electrical characterization of four Al(Op)3-based TFT

Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device

• Shawn Sanctis,
• Rudolf C. Hoffmann,
• Sabine Eiben and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2015, 6, 785–791, doi:10.3762/bjnano.6.81

• deposition cycles, obtained at drain–source voltage of 30 V, for gate–source voltage varied from 0–30 V in 10 V steps. Characteristic values for field-effect mobility μ, threshold voltage (Vth), and on/off current ratio (Ion/off) of wt TMV/ZnO hybrid material based transistor devices. Supporting Information

Numerical investigation of the effect of substrate surface roughness on the performance of zigzag graphene nanoribbon field effect transistors symmetrically doped with BN

• Majid Sanaeepur,
• Arash Yazdanpanah Goharrizi and
• Mohammad Javad Sharifi

Beilstein J. Nanotechnol. 2014, 5, 1569–1574, doi:10.3762/bjnano.5.168

• graphene nanoribbon that is symmetrically doped with boron nitride (BN) as a channel material, is numerically studied for the first time. The device merit for digital applications is investigated in terms of the on-, the off- and the on/off-current ratio. Due to the strong effect of the substrate roughness

• Green's function (NEGF) formalisms. The results show that with an appropriate selection of the substrate material, the proposed devices can meet the on/off-current ratio required for future digital electronics. Keywords: boron nitride; non-equilibrium Greens function (NEGF); on-/off-current ratio

• the on/off-current ratio for a 10 nm long 4h-2BN-ZGNRFET on a SiO2 substrate does not meet the required amount of 104 for digital transistors [5]. It is possible however to improve the device performance in terms of on/off-current ratio by increasing the width of the BN-doped regions. Figure 5a shows

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

• Pia Sundberg and
• Maarit Karppinen

Beilstein J. Nanotechnol. 2014, 5, 1104–1136, doi:10.3762/bjnano.5.123